Secondary ion mass spectrometry round-robin study of impurity analysis in gallium arsenide using uniformly-doped standard gallium arsenide specimens-Reference-Cited by-同舟云学术

Secondary ion mass spectrometry round-robin study of impurity analysis in gallium arsenide using uniformly-doped standard gallium arsenide specimens

Published:1994-01 Issue:1 Volume:21 Page:23-31
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Shichi Hiroyasu,Ogawa Tomoya,Kurosawa Satoru,Homma Yoshikazu,Kubota Yoshikane,Nakamura Yasushi,Nomura Koichi,Shibata Masahiro,Takahashi Junichi,Yoshioka Yoshiaki,Adachi Tatsuya,Akai Toshio,Hirano Masataka,Ihara Ayako,Kamejima Taibun,Koyama Hiroshi,Maruo Tetsuya,Matsunaga Hironori,Nakamura Takashi,Obata Takeshi,Okuno Kazuhiko,Shimanuki Yasushi,Tachikawa Iwao,Takase Hiromitsu,Tanigaki Takeshige,Tsukamoto Kazuyoshi

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference7 articles.

1. Round robin study of impurity analysis in gallium arsenide using secondary ion mass spectrometry

2. Evaluation of a cesium positive ion source for secondary ion mass spectrometry

3. Processing Data for Outliers

4. Extension of Sample Sizes and Percentage Points for Significance Tests of Outlying Observations

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