Secondary ion yields depending on the primary oxygen ion energy in cameca IMS-4f instrument
Author:
Publisher
Wiley
Subject
Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry
Reference12 articles.
1. Optimization of primary beam conditions for secondary ion mass spectrometry depth profiling of shallow junctions in silicon using a Cameca IMS‐3f
2. Characterization and removal of ion yield transients in the near surface region of secondary ion mass spectrometry depth profiles
3. Systematics of secondary‐ion‐mass spectrometry relative sensitivity factors versus electron affinity and ionization potential for a variety of matrices determined from implanted standards of more than 70 elements
4. Relative sensitivity factors for positive atomic and molecular ions sputtered from Si and GaAs
5. Transient effects in SIMS analysis for different angles of incidence of an O+2 primary ion beam
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: a procedure for eliminating the matrix effect;Surface and Interface Analysis;1998-04
2. Tribological Boron Concentration Profiles at Hard Steel Surfaces Studied by SIMS;Surface and Interface Analysis;1996-12
3. Atomic Spectrometry Updates—References;J. Anal. At. Spectrom.;1995
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