DC and transient models of the MSET device-Reference-Cited by-同舟云学术

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DC and transient models of the MSET device

Published:2021-02-11 Issue:4 Volume:34 Page:
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int J Numer Model

Author:

Peled Assaf¹^ORCID,Amrani Ofer¹,Rosenwaks Yossi¹

Affiliation:

1. Department of Electrical‐Engineering, Systems and Physical Electronics Tel‐Aviv University Tel‐Aviv Israel

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/jnm.2869

Reference22 articles.

1. The Electrostatically Formed Nanowire: A Novel Platform for Gas-Sensing Applications

2. Tunable diameter electrostatically formed nanowire for high sensitivity gas sensing

3. Dynamic Range Enhancement Using the Electrostatically Formed Nanowire Sensor

4. Threshold Logic With Electrostatically Formed Nanowires

5. Multiple State Electrostatically Formed Nanowire Transistors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Empirical Formula Modeling Method Using Neuro-Space Mapping for Coupled Microstrip Lines;Micromachines;2023-08-14

2. DC and transient models of the MSET device;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2021-02-11

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