High-field optically detected EPR and ENDOR of semiconductor defects using W-band microwave Fabry-Pérot resonators-Reference-Cited by-同舟云学术

High-field optically detected EPR and ENDOR of semiconductor defects using W-band microwave Fabry-Pérot resonators

Published:2005 Issue:S1 Volume:43 Page:S153-S165
ISSN:0749-1581
Container-title:Magnetic Resonance in Chemistry
language:en
Short-container-title:Magn. Reson. Chem.

Author:

Spaeth J.-M.,Tkach I.,Greulich-Weber S.,Overhof H.

Publisher

Wiley

Subject

General Materials Science,General Chemistry

Reference37 articles.

1. . Point Defects in Semiconductors and Insulators. Springer: Berlin, 2003.

2. Arsenic antisite defectAsGaandEL2 in GaAs

3. High-field ODMR investigation of the EL2 defect in semi-insulating GaAs

4. W-band Fabry–Pérot microwave reasonators for optical detected electron paramagnetic resonance and electron nuclear double resonance of paramagnetic defects in solids

5. Optically Detected Magnetic Resonance of Arsenic-Antisite-Related Defects in Semi-Insulating Bulk and Low Temperature MBE-Grown GaAs, Doctoral Thesis, University of Paderborn, 2002.

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