MOVPE GaN Grown on Alternative Substrates-Reference-Cited by-同舟云学术

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MOVPE GaN Grown on Alternative Substrates

Published:2001-10 Issue:8-10 Volume:36 Page:971-977
ISSN:0232-1300
Container-title:Crystal Research and Technology
language:en
Short-container-title:Cryst. Res. Technol.

Author:

Paszkiewicz R.,Paszkiewicz B.,Korbutowicz R.,Kozlowski J.,Tlaczala M.,Bryja L.,Kudrawiec R.,Misiewicz J.

Publisher

Wiley

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Reference2 articles.

1. The influence of MOCVD process scheme on the optical properties of GaN layers

2. Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach

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