Optical Probe in Gadolinium Doped GaN by Metalorganic Chemical Vapor Deposition
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Published:2013-06
Issue:
Volume:329
Page:109-113
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ISSN:1662-7482
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Container-title:Applied Mechanics and Materials
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language:
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Short-container-title:AMM
Author:
Shu Xiang Ping1, Melton Andrew2, Qiu Zhi Ren1, Ferguson Lan T.2, Feng Zhe Chuan3
Affiliation:
1. Sun Yat-Sen University 2. University of North Carolina at Charlotte 3. National Taiwan University
Abstract
Gd doping related excitons are observed in four samples with different gadolinium (Gd) adoption ratios, grown by metalorganic Chemical Vapor Deposition (MOCVD). The intensity and quenching phenomena with temperature in Gd related excitons are varied from the conduction type of samples. By temperature-dependent photoluminescence measurements the vanish effects in Gd-doping induced excitons show a significant difference from intrinsic and n-type samples to p-type samples. In the former two samples the Gd excitons disappeared beyond 200K, while in p-type samples it is still exist even in 533K.
Publisher
Trans Tech Publications, Ltd.
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