X-ray Diffraction Study of Composition Inhomogeneities in Ga1-xInxN Thin Layers
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference13 articles.
1. Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy
2. Phase separation in InGaN grown by metalorganic chemical vapor deposition
3. Propagation of X-rays in distorted crystals under dynamical diffraction
4. Strain-related phenomena in GaN thin films
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Distribution of cations in wurtzitic InxGa1−xN and InxAl1−xN alloys: Consequences for energetics and quasiparticle electronic structures;Physical Review B;2012-03-27
2. Modeling the compositional instability in wurtziteGa1−xInxN;Physical Review B;2008-02-26
3. Determination of the indium content and layer thicknesses in InGaN/GaN quantum wells by x-ray scattering;Journal of Applied Physics;2003-08
4. Structural and optical properties of InGaN/GaN layers close to the critical layer thickness;Applied Physics Letters;2002-08-12
5. Strain and composition distributions in wurtzite InGaN/GaN layers extracted from x-ray reciprocal space mapping;Applied Physics Letters;2002-05-27
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