Analysis of the Interfacial Energy of GaAs-Si Heterostructures
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Theoretical investigation of the growth of GaAs on Si(001), Si(110), Si(111), Si(113) and Si(331);Surfaces and Interfaces;2024-01
2. Electrical and Material Characteristics of Hafnium Oxide with Silicon Interface Passivation on III-V Substrate for Future Scaled CMOS Technology;Fundamentals of III-V Semiconductor MOSFETs;2010
3. Effects of annealing and substrate orientation on epitaxial growth of GaAs on Si;Journal of Applied Physics;2009-10-15
4. Influence of the substrate orientation on the electrical and material properties of GaAs metal-oxide-semiconductor capacitors and self-aligned transistors using HfO2 and silicon interface passivation layer;Applied Physics Letters;2008-05-19
5. Effect of substrate temperature on growth process of GaAs on Si(110) vicinal surface studied by reflection high-energy electron diffraction;Physica E: Low-dimensional Systems and Nanostructures;2008-02
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