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Transistors, Field-effect

Published:2003-04-15 Issue: Volume: Page:
ISSN:
Container-title:digital Encyclopedia of Applied Physics
language:
Short-container-title:

Author:

Faricelli John¹

Affiliation:

1. Digital Equipment Corporation; Hudson Massachusetts U.S.A.

Publisher

Wiley-VCH Verlag GmbH & Co. KGaA

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/3527600434.eap533/fullpdf

Reference19 articles.

1. Electron and Hole Mobilities in Silicon as a Function of Concentration and Temperature;Arora;IEEE Trans. Electron Dev.,1982

2. Electron and Hole Drift Velocity Measurements in Silicon and Their Empirical Relation to Electric Field and Temperature;Canali;IEEE Trans. Electron Dev.,1975

3. Impact Ionization Rates for Electrons and Holes in Silicon;Chynoweth;Phys. Rev.,1958

4. Measurement of the High Field Drift Velocity of Electrons in Inversion Layers on Silicon;Cooper;IEEE Electron Dev. Lett.,1981

5. Unipolar Field Effect Transistor;Dacey;Proc. IRE.,1953

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