Optical Signatures of Defect Centers in Transition Metal Dichalcogenide Monolayers-Reference-Cited by-同舟云学术

Optical Signatures of Defect Centers in Transition Metal Dichalcogenide Monolayers

Published:2021-02-03 Issue:3 Volume:4 Page:2000118
ISSN:2511-9044
Container-title:Advanced Quantum Technologies
language:en
Short-container-title:Adv Quantum Tech

Author:

M. C. de Melo Pedro Miguel¹²³,Zanolli Zeila²⁴³^ORCID,Verstraete Matthieu J.¹³

Affiliation:

1. nanomat/Q‐mat/CESAM Université de Liège Institut de Physique B‐4000 Sart Tilman Liège Belgium

2. Chemistry Department Debye Institute for Nanomaterials Science Condensed Matter and Interfaces Utrecht University PO Box 80.000, 3508 TA Utrecht The Netherlands

3. European Theoretical Spectroscopy Facility (ETSF) www.etsf.eu

4. Catalan Institute of Nanoscience and Nanotechnology (ICN2) CSIC and BIST Campus UAB Bellaterra Barcelona 08193 Spain

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computational Theory and Mathematics,Condensed Matter Physics,Mathematical Physics,Nuclear and High Energy Physics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/qute.202000118

Reference42 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides

3. Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control

4. A roadmap for electronic grade 2D materials

5. Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping

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