Local Activity in a Self‐Assembled Quantum Dot System

Author:

Wan Qin1,Zeng Fei12ORCID,Yu Junwei1,Chen Tongjin1,Lu Ziao1,Pan Feng1

Affiliation:

1. Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China

2. Center for Brain Inspired Computing Research (CBICR) Tsinghua University Beijing 100084 P. R. China

Abstract

AbstractResearch and development of memristor‐based neuromorphic networks has entered the stage of large‐scale application. However, the understanding of the adopted memristors is still vague, meaning a thorough study of their local activity is urgently necessary. Here, an electrode tip is created to focus the electrical field on the active locality, where the NbO quantum dot (QD) self‐assembles in the middle of the Nb‐doped AlNO film. The QD size can fluctuate under an appropriately controlled electron beam or electrical field, suggesting reversible nucleation behavior. The QD system periodically pulses when the input is enhanced to a co‐tunneling threshold or to one that activates the oscillation of the QD size. These two mechanisms are attributed to the local activity accounting for the information‐energy conversion of the QD system. This study presents a more precise and low energy‐consumption approach for neuromorphic computing by manipulating the local activity.

Funder

National Natural Science Foundation of China

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computational Theory and Mathematics,Condensed Matter Physics,Mathematical Physics,Nuclear and High Energy Physics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

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