Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu

Synthesis of High‐Quality Graphene and Hexagonal Boron Nitride Monolayer In‐Plane Heterostructure on Cu–Ni Alloy

Published:2017-05-19 Issue:9 Volume:4 Page:1700076
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Lu Guangyuan¹²³⁴,Wu Tianru¹²,Yang Peng⁵,Yang Yingchao³,Jin Zehua³,Chen Weibing³,Jia Shuai³,Wang Haomin¹²,Zhang Guanhua⁶,Sun Julong⁶,Ajayan Pulickel M.³,Lou Jun³,Xie Xiaoming¹²⁷,Jiang Mianheng¹²⁷

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China

2. CAS Center for Excellence in Superconducting Electronics (CENSE) Shanghai 200050 P. R. China

3. Department of Materials Science and NanoEngineering Rice University Houston TX 77005 USA

4. School of Electronic, Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 P. R. China

5. School of Physics and Electronics Central South University Changsha 410083 P. R. China

6. State Key Laboratory of Molecular Reaction Dynamics Dalian Institute of Chemical Physics Chinese Academy of Sciences Dalian 116023 P. R. China

7. School of Physical Science and Technology ShanghaiTech University Shanghai 200031 P. R. China

Funder

Chinese Academy of Sciences

Science and Technology Commission of Shanghai Municipality

Welch Foundation

Air Force Office of Scientific Research

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.201700076

Reference32 articles.

1. Deep Ultraviolet Light-Emitting Hexagonal Boron Nitride Synthesized at Atmospheric Pressure

2. Electric Field Effect in Atomically Thin Carbon Films

3. Disorder and Segregation in B−C−N Graphene-Type Layers and Nanotubes: Tuning the Band Gap

4. Transition from insulator to metal induced by hybridized connection of graphene and boron nitride nanoribbons

5. BN-Embedded Graphene with a Ubiquitous Gap Opening

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