ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells Deposited by Spray-ILGAR (Ion-Layer Gas Reaction)-Reference-Cited by-同舟云学术

ZnS Nanodot Film as Defect Passivation Layer for Cu(In,Ga)(S,Se)2 Thin-Film Solar Cells Deposited by Spray-ILGAR (Ion-Layer Gas Reaction)

Published:2011-05-05 Issue:4 Volume:1 Page:561-564
ISSN:1614-6832
Container-title:Advanced Energy Materials
language:en
Short-container-title:Adv. Energy Mater.

Author:

Fu Yanpeng,Allsop Nicholas A.,Gledhill Sophie E.,Köhler Tristan,Krüger Martin,Sáez-Araoz Rodrigo,Blöck Ulrike,Lux-Steiner Martha Ch.,Fischer Christian-Herbert

Publisher

Wiley

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/aenm.201100146/fullpdf

Reference23 articles.

1. Characterisation and modelling of chalcopyrite solar cells

2. Indium sulfide buffer/CIGSSe interface engineering: Improved cell performance by the addition of zinc sulfide

3. Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

4. Spray-ILGAR indium sulfide buffers for Cu(In,Ga)(S,Se)2 solar cells

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