Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors
Author:
Affiliation:
1. Department of Physics and Institute of Basic Science; Sungkyunkwan University; Suwon 440-746 Republic of Korea
2. Department of Chemistry and Institute of Basic Science; Sungkyunkwan University; Suwon 440-746 Republic of Korea
Funder
Faculty Research Fund
Sungkyunkwan University
Publisher
Wiley
Subject
General Chemistry
Reference20 articles.
1. Low Dielectric Constant Materials for ULSI Interconnects
2. Low dielectric constant materials for microelectronics
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4. Plasma deposition of low-dielectric-constant fluorinated amorphous carbon
5. Infrared spectroscopy study of low-dielectric-constant fluorine-incorporated and carbon-incorporated silicon oxide films
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1. Influence of plasma parameters on low-k SiCOH film grown by plasma-enhanced chemical vapor deposition using dimethyldimethoxysilane;Vacuum;2023-11
2. Dielectric Characteristics of Low-Dielectric-Constant Plasma-Polymerized SiCOH Films Formed with Phenyltrimethoxysilane Precursor;Journal of Nanoscience and Nanotechnology;2017-10-01
3. Control of Cell Adhesiveness on Plasma Polymerized Thin Film Deposited with Tetrakis(trimethylsilyloxy)Silane and Cyclohexane Precursors;Journal of Biomaterials and Tissue Engineering;2017-09-01
4. Characterization of Low-k SiCOH Film Etching in Fluorocarbon Inductively Coupled Plasmas;Nanoscience and Nanotechnology Letters;2017-02-01
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