Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics-Reference-Cited by-同舟云学术

Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

Published:2015-02-13 Issue:6 Volume:28 Page:675-683
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Niu Guofu¹,Ma Rongchen¹,Luo Lan¹,Cressler John D.²

Affiliation:

1. Alabama Microelectronics Science and Technology Center, Electrical and Computer Engineering Department; 200 Broun Hall, Auburn University; Auburn AL 36849 USA

2. School of Electrical and Computer Engineering Georgia Institute of Technology; 777 Atlantic Drive NW Atlanta GA 30332-0250 USA

Funder

National Aeronautics and Space Administration

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2055/fullpdf

Reference13 articles.

1. Sub-1K Operation of SiGe Transistors and Circuits;Najafizadeh;IEEE Electron Device Letters,2009

2. Cressler JD “On the potential of SiGe HBTs for extreme environment electronics” 93 2005 1559 1582

3. Temperature scalable modeling of SiGe HBT DC currents down to 43K;Feng;ECS Trans,2006

4. Xu Z Wei X Niu G Luo L Thomas D Cressler JD “Modeling of temperature dependent I C - V B E characteristics of SiGe HBTs from 43-400K” 2008 81 84

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1. Investigation on the performance dependence of proton radiated SiGe HBTs with emitter area and temperature;Modern Physics Letters B;2021-12-13

2. Design of Cryogenic LNAs for High Linearity in Space Applications;IEEE Transactions on Circuits and Systems I: Regular Papers;2019-12

3. Impact of finger numbers on the performance of proton-radiated SiGe power HBTs at room and cryogenic temperatures;Microelectronics Reliability;2018-12