High temperature current-voltage characteristics of InP-based tunnel junctions-Reference-Cited by-同舟云学术

High temperature current-voltage characteristics of InP-based tunnel junctions

Published:2014-03-28 Issue:6 Volume:23 Page:773-782
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Lumb Matthew P.¹²,González María³²,Yakes Michael K.²,Affouda Chaffra A.²,Bailey Christopher G.²,Walters Robert J.²

Affiliation:

1. The George Washington University; 2121 I Street NW Washington DC 20037 USA

2. Naval Research Laboratory; Washington DC 20375 USA

3. Sotera Defense Solutions; 430 National Business Parkway, Suite 100 Annapolis Junction MD 20701 USA

Funder

Office of Naval Research

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference38 articles.

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2. González M Chan N Ekins-Daukes NJ Adams JGJ Stavrinou P Vurgaftman I Meyer JR Abell J Walters RJ Cress CD Jenkins PP Modeling and analysis of multijunction solar cells Proceedings of SPIE, Physics and Simulation of Optoelectronic Devices XIX, San Francisco 2011

3. Walters RJ González M Tischler JG Lumb MP Meyer JR Vurgaftman I Abell J Yakes MK Ekins-Daukes NJ Adams JGJ Chan N Stavrinou P Jenkins PP Design of an achievable, all lattice-matched multijunction solar cell using InGaAlAsSb 37th IEEE Photovoltaic Specialist Conference, Seattle 2011

4. Lumb MP González M Bailey CG Vurgaftman I Meyer JR Abell J Yakes M Hoheisel R Tischler JG Stavrinou PN Fuhrer M Ekins-Daukes NJ Walters RJ Drift-diffusion modeling of InP-based triple junction solar cells Proceedings of SPIE, Physics and Simulation of Optoelectronic Devices, San Francisco 2013

5. Wide-band-gap InAlAs solar cell for an alternative multijunction approach;Leite;Applied Physics Letters,2011

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