Monitoring microstructure and phase transitions in thin films by high-temperature resistivity measurements-Reference-Cited by-同舟云学术

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Monitoring microstructure and phase transitions in thin films by high-temperature resistivity measurements

Published:2012-01-25 Issue:8 Volume:44 Page:1162-1165
ISSN:0142-2421
Container-title:Surface and Interface Analysis
language:en
Short-container-title:Surf. Interface Anal.

Author:

Duguet Thomas¹,Senocq François¹,Aloui Lyacine¹,Haidara Fanta²,Samélor Diane¹,Mangelinck Dominique²,Vahlas Constantin¹

Affiliation:

1. CIRIMAT, Université de Toulouse-CNRS; 4 allée Emile Monso BP 44362; 31030; Toulouse Cedex 4; France

2. IM2NP, Université Paul Cézanne-CNRS; Faculté de St Jérôme; Case 142; 13397; Marseille Cedex 20; France

Publisher

Wiley

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,General Chemistry

Reference20 articles.

1. Kinetics of silicide formation measured by in situ ramped resistance measurements

2. Al–Co reactions in multilayer films: first stages and selective formation of new (metastable) phases

3. Evaluation of Al(Nd)-alloy films for application to thin-film-transistor liquid crystal displays

4. Activation energy for Ni2Si and NiSi formation measured over a wide range of ramp rates

5. Reaction Kinetics in Differential Thermal Analysis

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