On the mechanical strength of monocrystalline, multicrystalline and quasi-monocrystalline silicon wafers: a four-line bending test study

Author:

Barredo Josu1,Parra Vicente2,Guerrero Ismael2,Fraile Alberto3,Hermanns Lutz3

Affiliation:

1. Centre for Modelling in Mechanical Engineering (CEMIM-F2I2); José Gutiérrez Abascal, 2 28006 Madrid Spain

2. DC Wafers Investments, S.L.; Valdelafuente León Spain

3. Department of Structural Mechanics and Industrial Constructions; UPM; Madrid Spain

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon;Schmidt;Physical Review B,2004

2. Casting large silicon single-crystals;Schmid;Journal of Electronic Materials,1976

3. Casting single crystal silicon: novel defect profiles from BP Solar's Mono2 TM wafers;Stoddard;Solid State Phenomena,2008

4. Marie B Bailly S Jouini A Ponthenier D Plassat N Dubost L Pihan E Enjalbert N Garandet J-P Camel D Seeded grown mono-like Si ingots: effect on recombination activity of dislocations 26 th European Photovoltaic Solar Energy Conference EUPVSEC 2011 1910 1914

5. Tachibana T Sameshima T Miyazaki N Kojima T Arafune K Kakimoto K Miyamura Y Harada H Sekiguchi T Ohshita Y Ogura A Evaluation of crystalline defects in silicon ingots fabricated by seeding cast growth 26 th European Photovoltaic Solar Energy Conference EUPVSEC 2011 1920 1922

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