Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy-Reference-Cited by-同舟云学术

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Space charged region in GaN and InN nanocolumns investigated by atomic force microscopy

Published:2008-05 Issue:6 Volume:5 Page:1609-1611
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Niebelschütz M.,Cimalla V.,Ambacher O.,Machleidt T.,Franke K.-H.,Ristic J.,Grandal J.,Sánchez-García M. A.,Calleja E.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference21 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. GaN, AlN, and InN: A review

4. Band parameters for III–V compound semiconductors and their alloys

5. Wet etching of GaN, AlN, and SiC: a review

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Elastic properties of nanowires;physica status solidi (b);2010-09-15

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