The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth
Author:
Affiliation:
1. Department of Electronics and Akasaki Research Center, Nagoya University, Furo‐cho, Chikusa‐ku, Nagoya 464‐8603, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303511
Reference9 articles.
1. Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
2. Growth of GaN free from cracks on a (111)Si substrate by selective metalorganic vapor-phase epitaxy
3. Growth of a GaN crystal free from cracks on a (111)Si substrate by selective MOVPE
4. Selective Growth of GaN/AlGaN Microstructures by Metalorganic Vapor Phase Epitaxy
5. Wavelength control of vertical cavity surface-emitting lasers by using nonplanar MOCVD
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