Optical characterization of GaN doping superlattices: as grown, hydrogen implanted, and annealed-Reference-Cited by-同舟云学术

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Optical characterization of GaN doping superlattices: as grown, hydrogen implanted, and annealed

Published:2004-01-19 Issue:2 Volume:1 Page:223-228
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kunert H.W.,Brink D.J.¹,Hayes M.¹,Malherbe J.¹,Prinsloo L.²,Barnas J.³,Machatine A.G.I.¹,Diale M.W.¹

Affiliation:

1. Department of Physics, University of Pretoria, 0001 Pretoria, South Africa

2. Department of Chemistry, University of Pretoria, 0001 Pretoria, South Africa

3. Department of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61‐614 Poznan, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303925

Reference10 articles.

1. Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells

2. Metalorganic Vapor Phase Epitaxial Growth and Properties of GaN/Al0.1Ga0.9N Layered Structures

3. III–nitrides: Growth, characterization, and properties

4. Compositional and doping superlattices in III-V semiconductors

5. Allowed combinations and overtones of vibrational modes in wurtzite GaN

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Phonons in sapphire Al2O3 substrate for ZnO and GaN;Materials Science and Engineering: C;2007-09

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