Porous‐like structures prepared by temperature‐pressure treatment of heavily hydrogenated silicon-Reference-Cited by-同舟云学术

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Porous‐like structures prepared by temperature‐pressure treatment of heavily hydrogenated silicon

Published:2005-06 Issue:9 Volume:2 Page:3329-3333
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Misiuk A.¹,Shalimov A.²,Bak‐Misiuk J.²,Surma B.¹³,Wnuk A.³,Antonova I. V.⁴,Zavodinsky V. G.⁵,Gnidenko A. A.⁵

Affiliation:

1. Institute of Electron Technology, Al. Lotnikow 46, 02‐668 Warsaw, Poland

2. Institute of Physics, PAS, Al. Lotnikow 32, 02‐668 Warsaw, Poland

3. Institute of Electronic Materials Technology, Wolczynska 133, 01‐919 Warsaw, Poland

4. Institute of Semiconductor Physics, SB RAS, Lavrentieva 13, 630090 Novosibirsk, Russia

5. Institute of Materials Science, RAS, Tikhookeanskaya 153, 680042 Khabarovsk, Russia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461156

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. MicroRaman studies of implantation-induced amorphization of Si and subsequent regrowth under high-pressure and high-temperature treatment;physica status solidi (a);2010-11

2. Pressure mediated release of hydrogen from silicon co-implanted with H2+ and He+;physica status solidi (c);2007-05

3. Buried Nano - Structured Layers in High Temperature – Pressure Treated Si:He;Solid State Phenomena;2006-07

4. Influence of temperature–pressure treatment on heavily hydrogenated silicon surface;Applied Surface Science;2006-07

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