Affiliation:
1. Institute of Electron Technology
2. Institute of Electronic Materials Technology
3. Polish Academy of Sciences
4. Consiglio Nazionale delle Ricerche (CNR)
Abstract
The effect of treatment at up to 1400 K (HT) under enhanced hydrostatic pressure (HP,
up to 1.2 GPa) on helium implanted single crystalline silicon (Si:He, He ion dose up to 6x1017cm-2,
energy up to 300 keV) has been investigated by transmission electron microscopy, secondary ion
mass spectrometry, photoluminescence and X-Ray methods. The treatment of Si:He at ≤ 920 K -
HP results in a formation of buried nano-structured layers containing helium filled cavities/bubbles
and numerous extended defects; many less dislocations are created at ≥ 1270 K in Si:He treated
under HP. HP affects the recrystallization of amorphous Si, diffusivity of implanted He and of
implantation-induced defects and thus promotes the creation of more but smaller
He-filled cavities/bubbles as well as other defects near the range of implanted He+.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Cited by
2 articles.
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