AlGaN/GaN HEMT‐based fully monolithic X‐band low noise amplifier-Reference-Cited by-同舟云学术

AlGaN/GaN HEMT‐based fully monolithic X‐band low noise amplifier

Published:2005-04-11 Issue:7 Volume:2 Page:2631-2634
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Schwindt R.¹,Kumar V.¹,Aktas O.²,Lee J.‐W.³,Adesida I.¹

Affiliation:

1. Micro and Nanotechnology Laboratory and Department of Electrical and Computer Engineering, University of Illinois at Urbana‐Champaign, 208 N. Wright Street, Urbana, IL 61801, USA

2. Department of Electrical and Electronics Engineering, Bilkent University, 06800 Bilkent, Ankara, Turkey

3. School of Electronics and Information, Kyung Hee University, Suwon, 449‐701, Korea

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461544

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