Multiphonon emission process on DX‐like centers in indium doped Pb 0.75 Sn 0.25 Te-Reference-Cited by-同舟云学术

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Multiphonon emission process on DX‐like centers in indium doped Pb 0.75 Sn 0.25 Te

Published:2003-01-27 Issue:2 Volume: Page:776-779
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Romčević N.¹,Khokhlov D. R.²,Stojanović D.¹,Romčević M.³,Nikorich A. V.⁴

Affiliation:

1. Institute of Physics, P.O. Box 57, 11001 Belgrade, Yugoslavia

2. Physics Department, Moscow State University, Moscow 119899, Russia

3. Institute of Nuclear Science Vinča, P.O. Box 522, 11001 Belgrade, Yugoslavia

4. Applied Physics Institute of the Moldavian Academy of Science, Kishenev, Moldavia

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306211

Reference8 articles.

1. Nonradiative capture and recombination by multiphonon emission in GaAs and GaP

2. Deep donor levels (DXcenters) in III‐V semiconductors

3. Photoconductivity saturation of AlGaAs:Si-a new criterion for negative U

4. D. R.KhokhlovandB. A.Volkov Proc. 23th Internat. Conf. Physics Semicond. Berlin (Germany) 21–26 July 1996 edited by M. Scheffler and R. Zimmermann (World Scientific Singapore 1996) Vol. 4 p. 2941.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compensation of native defects in PbTe and Pb1-x Sn x Te;physica status solidi (b);2007-12-14

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