Fabrication of reflective GaN mesa sidewalls for the application to high extraction efficiency LEDs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2. High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
3. Simulation and fabrication of highly efficient InGaN‐based LEDs with corrugated interface substrate
4. Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns
5. Light-output enhancement in a nitride-based light-emitting diode with 22° undercut sidewalls
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2. Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar InxGa1−xN/GaN Multiple Quantum Wells;Nanoscale Research Letters;2021-09-16
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