Extended theory for local‐phonon‐coupled low‐energy anharmonic excitation of oxygen in silicon: Calculation of line intensity ratio-Reference-Cited by-同舟云学术

Extended theory for local‐phonon‐coupled low‐energy anharmonic excitation of oxygen in silicon: Calculation of line intensity ratio

Published:2003-01-27 Issue:2 Volume: Page:673-679
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Yamada‐Kaneta H.¹

Affiliation:

1. Nano‐electronic Materials Laboratories, Fujitsu Laboratories Limited, 10‐1 Morinosato‐Wakamiya, Atsugi 243‐0197, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306173

Reference11 articles.

1. H.Takahashi H.Yamada‐Kaneta S.Watanabe andM.Suezawa in: Proc. Forum on Science and Technology of Silicon Materials edited by H. Yamada‐Kaneta and K. Sumino (Japan Technical Information Service Futtsu Japan 2001) pp. 342–346.

2. Theory of local-phonon-coupled low-energy anharmonic excitation of the interstitial oxygen in silicon

3. Infrared Absorption by Interstitial Oxygen in Germanium-Doped Silicon Crystal

4. Infrared absorption by interstitial oxygen in germanium-doped silicon crystals

5. Far-infrared absorption by interstitial oxygen impurities in silicon crystals

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