Exciton kinetics and luminescence in disordered In x Ga 1− x P/GaAs quantum wells-Reference-Cited by-同舟云学术

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Exciton kinetics and luminescence in disordered In x Ga 1− x P/GaAs quantum wells

Published:2003-07-31 Issue:5 Volume: Page:1429-1432
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Rudamas C.¹,Martínez‐Pastor J.²,González L.³,Vinattieri A.⁴,Colocci M.⁴

Affiliation:

1. Present address: Max Planck Institute for Biophysical Chemistry, Am Fassberg 11, 37077 Göttingen, Germany

2. Instituto de Ciencia de Materiales, Universidad de Valencia, P. O. Box 2085, 46071 Valencia, Spain

3. Instituto de Microelectrónica de Madrid, Isaac Newton 8, 28760 Tres Cantos, Spain

4. European Laboratory for Non‐linear Spectroscopy, Via Carrara 1, Sesto‐Fiorentino, Italy

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303194

Reference11 articles.

1. Band Alignments in InxGa1xP/GaAs Heterostructures Investigated by Pressure Experiments

2. Correlation between optical properties and barrier composition in InxGa1−xP/GaAs quantum wells

3. Consequences of the spatial localization on the exciton recombination dynamics in InGaP/GaAs heterostructures

4. Lateral redistribution of excitons in CdSe/ZnSe quantum dots

5. Photoconductivity studies of the mobility edge in amorphous silicon

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exciton recombination dynamics inInAs∕InPself-assembled quantum wires;Physical Review B;2005-05-31

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