Photoconductivity studies of the mobility edge in amorphous silicon-Reference-Cited by-同舟云学术

Photoconductivity studies of the mobility edge in amorphous silicon

Published:1981-05 Issue:5 Volume:43 Page:781-796
ISSN:1364-2812
Container-title:Philosophical Magazine B
language:en
Short-container-title:Philosophical Magazine B

Author:

Spear W. E.¹,Al-Ani Haifa¹²,Le Comber P. G.¹

Affiliation:

1. a Carnegie Laboratory of Physics, University of Dundee , Dundee , DD1 4HN , Scotland

2. b Nuclear Research Centre, Al-Twetha , Baghdad , Iraq

Publisher

Informa UK Limited

Subject

General Physics and Astronomy,General Chemical Engineering

Link

https://www.tandfonline.com/doi/pdf/10.1080/01418638108222346

Reference18 articles.

1. Hole drift mobility in amorphous silicon

2. Photoconductivity and recombination in doped amorphous silicon

3. Beyer , W. Mell , H. and Overhof , H. Proceedings of the Seventh International Conference on Amorphous and Liquid Semiconductors. Edited by: Spear , W. E. pp.328University of Edinburgh: CICL.

4. Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors

5. Mott , N. F. and Davis , E. A. 1979. Electronic Processes in Non-Crystalline Materials,, second edition, 287 ffOxford: Clarendon Press. See also

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