Drive current of ultrathin Ge-on-insulator n-channel MOSFETs

Author:

Azuma Y.,Mori T.,Tsuchiya H.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference6 articles.

1. S. Takagi and S. Sugahara, in: Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM06), Yokohama, Japan, September 2006, pp. 1056-1057.

2. T. Mori, Y. Azuma, H. Tsuchiya, and T. Miyoshi, to be published in IEEE Trans. on Nanotechnology 7(2) (2008).

3. Electron drift velocity and diffusivity in germanium

4. S. Takagi, in: Extended Abstracts of Int'l Conf. on Solid State Devices and Materials (SSDM04), Tokyo, Japan, September 2004, pp. 10-11.

5. A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Carrier Transport in High-mobility MOSFETs;Carrier Transport in Nanoscale MOS Transistors;2016-10-14

2. Role of Carrier Transport in Source and Drain Electrodes of High-Mobility MOSFETs;IEEE Electron Device Letters;2010-04

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