Time resolved study of laser diode characteristics during pulsed operation-Reference-Cited by-同舟云学术

Time resolved study of laser diode characteristics during pulsed operation

Published:2003-11-24 Issue:7 Volume: Page:2283-2286
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Eichler Christoph¹,Schad Sven‐Silvius²,Seyboth Matthias²,Habel Frank²,Scherer Marcus²,Miller Stephan²,Weimar Andreas³,Lell Alfred³,Härle Volker³,Hofstetter Daniel⁴

Affiliation:

1. Phone: +49 731 50 26192, Fax: +49 731 50 26049

2. Optoelectronics Department, University of Ulm, 89069 Ulm, Germany

3. OSRAM Opto Semiconductors, 93049 Regensburg, Germany

4. Institute of Physics, University of Neuchâtel, 2000 Neuchâtel, Switzerland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303296

Reference5 articles.

1. Degradation Analysis of InGaN Laser Diodes

2. Influence of the Layer Design on the Far Field Pattern in GaN Based Laser Structures

3. Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys

4. Band parameters for III–V compound semiconductors and their alloys

5. Activation energies of Si donors in GaN

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