Studies on dislocation patterning in 6-inch GaAs crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference19 articles.
1. LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
2. Dislocation cell structures in melt-grown semiconductor compound crystals
3. GaAs wafer mapping by microwave-detected photoconductivity
4. A compilation and analysis of data for the stress dependence of the subgrain size
5. Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry
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1. Influence of cooling rate on microstructure and defect evolution in GaAs during solidification;Modelling and Simulation in Materials Science and Engineering;2023-11-06
2. Cellular dislocations patterns in monolike silicon: Influence of stress, time under stress and impurity doping;Journal of Crystal Growth;2018-05
3. Defect Generation and Interaction during Crystal Growth;Handbook of Crystal Growth;2015
4. Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures;Semiconductors;2010-07
5. Transport phenomena of crystal growth—heat and mass transfer;AIP Conference Proceedings;2010
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