Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Progress in the melt growth of III–V compounds
2. Crystal Growth Technology;Rudolph,2003
3. Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)
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