Ab initio materials design and Curie temperature of GaN‐based ferromagnetic semiconductors-Reference-Cited by-同舟云学术

Ab initio materials design and Curie temperature of GaN‐based ferromagnetic semiconductors

Published:2003-11-24 Issue:7 Volume: Page:2855-2859
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Sato K.¹²,Dederichs P. H.³,Araki K.¹,Katayama‐Yoshida H.³¹

Affiliation:

1. Department of Condensed Matter Physics, The Institute of Scientific and Industrial Research, Osaka University, 8‐1 Mihogaoka, Ibaraki, Osaka 567‐0047, Japan

2. Department of Computational Nanomaterials Design, Nanoscience and Nanotechnology Center, The Institute of Scientific and Industrial Research, Osaka University, 8‐1 Mihogaoka, Ibaraki, Osaka 567‐0047, Japan

3. Institut für Festkörperforschung, Forschungszentrum Jülich, 52425 Jülich, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303289

Reference11 articles.

1. Making Nonmagnetic Semiconductors Ferromagnetic

2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

3. Material Design of GaN-Based Ferromagnetic Diluted Magnetic Semiconductors

4. First principles materials design for semiconductor spintronics

5. H.Katayama‐YoshidaandK.Sato J. Phys. Chem. Solids in press.

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