InAs/InGaAs/InP structures for quantum dot infrared photodetectors-Reference-Cited by-同舟云学术

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InAs/InGaAs/InP structures for quantum dot infrared photodetectors

Published:2005-05 Issue:8 Volume:2 Page:3171-3174
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Landi S. M.¹,Pires M. P.¹,Tribuzy C. V.‐B.¹,Souza P. L.¹,Marega E.²,Silva A. G.³,Guimarães P. S. S.³

Affiliation:

1. LabSem, Centro de Estudos em Telecomunicações, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marquês de São Vicente 225, Rio de Janeiro, RJ 22453‐900, Brazil

2. Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, SP, Brazil

3. Departamento de Física, Universidade Federal de Minas Gerais, Caixa Postal 702, Belo Horizonte, MG 30123‐970, Brazil

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460752

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field;Journal of Applied Physics;2011-10-15

2. Morphology and Crystal Quality of InAs QDs Grown by MOVPE Using Different Growth Modes;Advanced Materials Research;2007-11

3. Formation of mid-infrared emissive InAs quantum dots on a graded InxGa1−xAs/InP matrix with a more uniform size and higher density under safer growth conditions;Nanotechnology;2006-02-27

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