Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field-Reference-Cited by-同舟云学术

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Tunneling through stacked InAs/InGaAs/InP self-assembled quantum dots in a magnetic field

Published:2011-10-15 Issue:8 Volume:110 Page:083717
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Silva A. G.,Lopez F. E.,Guimarães P. S. S.,Pires M. P.,Souza P. L.,Landi S. M.,Villas-Bôas J. M.,Vieira G. S.,Vinck-Posada H.,Rodriguez B. A.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3656706

Reference48 articles.

1. Semiconductor quantum-dot nanostructures: Their application in a new class of infrared photodetectors

2. High-performance mid-infrared quantum dot infrared photodetectors

3. The present status of quantum dot lasers

4. Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts

5. High-speed quantum dot lasers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scaling of the Fermi‐Edge Singularity in Quantum Dots;physica status solidi (b);2019-01-08

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