Infrared measurements of InN films at low temperatures-Reference-Cited by-同舟云学术

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Infrared measurements of InN films at low temperatures

Published:2003-11-24 Issue:7 Volume: Page:2838-2841
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Ishitani Y.¹,Xu K.²,Terashima W.³,Hashimoto N.³,Yoshitani M.³,Hata T.³,Yoshikawa A.⁴¹

Affiliation:

1. Center for Frontier Electronics and Photonics, Chiba University, Chiba, 263‐8522, Japan

2. CREST – Japan Science and Technology Corporation 1‐33 Yayoicho, Inage‐ku, Chiba, 263‐8522, Japan

3. Dept. of Science and Technology, Graduate School, Chiba University, Chiba, 263‐8522, Japan

4. Dept. of Electronics and Mechanical Engineering, Chiba University, Chiba, 263‐8522, Japan

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303400

Reference7 articles.

1. Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h

2. Effective electron mass and phonon modes inn-type hexagonal InN

3. Growth-dependent phonon characteristics in InN thin films

4. Unusual properties of the fundamental band gap of InN

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1. Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD;Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems;2016-09-07

2. Carrier dynamics and related electronic band properties of InN films;Japanese Journal of Applied Physics;2014-09-26

3. Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy;Thin Solid Films;2013-06

4. Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE;physica status solidi (c);2012-01-26

5. Polarized infrared reflectance studies for wurtzite InN epilayers on Si(111) grown by molecular beam expitaxy;Thin Solid Films;2011-11

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