Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h
Author:
Affiliation:
1. Center for Frontier Electronics and Photonics, Chiba University VBL, Chiba 263‐8522, Japan
2. Department of Electronics and Mechanical Engineering, Chiba University, 1‐33 Yayoi‐cho, Inage‐ku, Chiba 263‐8522, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200390067
Reference5 articles.
1. GaN, AlN, and InN: A review
2. Electron transport in wurtzite indium nitride
3. Transient electron transport in wurtzite GaN, InN, and AlN
4. Improvement on epitaxial grown of InN by migration enhanced epitaxy
5. Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy
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