In‐situ Raman Spectroscopy on III–V semiconductors at high temperature in MOVPE
Author:
Affiliation:
1. Institut für Festkörperphysik, Sekr. PN 6‐1, Hardenbergstr. 36, D‐10623 Berlin, Germany
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303851
Reference15 articles.
1. N.EsserandW.Richter Raman Scattering from Surface Phonons Eds.: M. Cardona G. Güntherodt Springer‐Verlag Berlin Heidelberg New York (2000).
2. Investigation by Raman scattering of the properties of III‐V compound semiconductors at high temperature
3. Landolt‐Börnstein data collection http://www.springer.de/phys/laboe/.
4. Raman scattering from crystals of the diamond structure
5. Anharmonic Decay of Optical Phonons
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3. GaAs nanowires grown by Au-catalyst-assisted MOVPE using tertiarybutylarsine as group-V precursor;Journal of Crystal Growth;2007-01
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