Micro‐photoluminescence on bevelled samples – a method of assessing δ‐doped layer-Reference-Cited by-同舟云学术

Micro‐photoluminescence on bevelled samples – a method of assessing δ‐doped layer

Published:2003-02 Issue:3 Volume: Page:1055-1059
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Srnanek R.¹,Kovac J.¹,Kinder R.¹,Geurts J.²,Peternai L.¹,Mc Phail D. S.³,Fearn S.³,Chater R. J.³,Sciana B.⁴,Radziewicz D.⁴,Tlaczala M.⁴

Affiliation:

1. Microelectronic Department, Slovak University of Technology, Ilkovicova 3, 812 19 Bratislava, Slovakia

2. Physikalisches Institut, Universität Würzburg, 97074 Würzburg, Germany

3. Department of Materials, Imperial College, Prince Consort Road, London SW7 2BP, UK

4. Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50‐372 Wrocław, Poland

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200306244

Reference6 articles.

1. E. F.Schubert(Ed.) Delta Doping of Semiconductors (Cambridge University Press Cambridge 1995).

2. Diagnostics of Si multi-δ-doped GaAs layers by Raman spectroscopy on bevelled structures

3. Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

4. Chemical bevelling of GaAs-based structures

5. R.Srnanek R.Kinder J.Kovac B.Sciana M.Tlaczala D. S.McPhail S.Fbarn R. J.Charter andJ.Geurts (results presented at conference EXMATEC Budapest 2002).

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