Performance stability of high‐power III‐nitride metal‐oxide semiconductor‐heterostructure field‐effect transistors-Reference-Cited by-同舟云学术

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Performance stability of high‐power III‐nitride metal‐oxide semiconductor‐heterostructure field‐effect transistors

Published:2005-04-11 Issue:7 Volume:2 Page:2651-2654
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Saygi S.¹,Fatima H.¹,He X.¹,Rai S.¹,Koudymov A.¹,Adivarahan V.¹,Yang J.¹,Simin G.¹,Asif Khan M.¹

Affiliation:

1. Department of Electrical Engineering, University of South Carolina, Columbia, SC 29208, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461520

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Unified analytical treatment for the current flow due to tunneling of electrons from metal into semiconductor;Journal of Computational Electronics;2013-12-04

2. Physics of GaN-based Power Field Effect Transistors;ECS Transactions;2013-03-15

3. Calculations of Thermal Expansivity and Lattice Constant of GaN Using Integer and Noninteger n-Dimensional Debye Functions;International Journal of Thermophysics;2012-10-20

4. Insulated Gate Nitride-Based Field Effect Transistors;Fundamentals of III-V Semiconductor MOSFETs;2010

5. Digital oxide deposition of SiO2 layers for III-nitride metal-oxide-semiconductor heterostructure field-effect transistors;Applied Physics Letters;2006-05

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