Fluctuation theory of donor‐acceptor pair luminescence in compensated semiconductors-Reference-Cited by-同舟云学术

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Fluctuation theory of donor‐acceptor pair luminescence in compensated semiconductors

Published:2004-03 Issue:4 Volume:1 Page:722-726
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Bondarev V. N.,Kuskovsky Igor L.¹,Gu Y.¹,Pikhitsa P. V.²,Belous V. M.²,Neumark G. F.¹,Guo S. P.³,Tamargo M. C.³

Affiliation:

1. Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY 10027, USA

2. Research Institute of Physics, Odessa National University, Odessa, Ukraine 65026

3. Department of Chemistry, The City College of CUNY, New York, NY 10038, USA

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200304243

Reference10 articles.

1. Wide bandgap light-emitting devices materials and doping problems

2. Decay Dynamics in Disordered Systems: Application to Heavily Doped Semiconductors

3. The role of potential fluctuations in continuous-wave donor–acceptor pair luminescence of heavily doped materials

4. Time-resolved photoluminescence of heavily nitrogen-doped ZnSe: role of fluctuations

5. Modified donor–acceptor pair luminescence in heavily nitrogen‐doped zinc selenide

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two components of donor-acceptor recombination in compensated semiconductors: Analytical model of spectra in the presence of electrostatic fluctuations;Physical Review B;2018-08-31

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