Author:
Ohno Takeo,Oyama Yutaka,Nishizawa Jun-ichi
Reference8 articles.
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2. Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunnel junctions
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4. Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs
5. Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vacuum
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2 articles.
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