New results on HVPE growth of AlN, GaN, InN and their alloys-Reference-Cited by-同舟云学术

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New results on HVPE growth of AlN, GaN, InN and their alloys

Published:2008-05 Issue:6 Volume:5 Page:1825-1828
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Usikov A.,Soukhoveev V.,Shapovalova L.,Syrkin A.,Kovalenkov O.,Volkova A.,Sizov V.,Ivantsov V.,Dmitriev V.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference7 articles.

1. and , in: III-Nitride Semiconductor Materials, edited by Z.C. Feng (Imperial College Press, 2006; ISBN 1-86094-636-4), pp. 1-40.

2. Thick AlN layers grown by HVPE

3. Recent results on AlN growth by HVPE and fabrication of free standing AlN wafers

4. 341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2022-10

2. Shaping light with microchannel silicon;Journal of the Optical Society of America B;2018-04-06

3. Layer thickness dependent carrier recombination rate in HVPE GaN;physica status solidi (b);2010-06-23

4. Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy technology;Technical Physics Letters;2010-06

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