TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE with anti-surfactant treatment
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference7 articles.
1. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
2. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
3. Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
4. High-quality GaN films obtained by air-bridged lateral epitaxial growth
5. Anti-Surfactant in III-Nitride Epitaxy -- Quantum Dot Formation and Dislocation Termination --
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1. Development of High Power, Large Area, Deep Ultraviolet Light Emitting Devices Using Dynamic Microplasma Excitation (MIPE) of AlGaN Multiple Quantum Wells;Electronics and Communications in Japan;2016-06-14
2. Blocking Growth by an Electrically Active Subsurface Layer: The Effect of Si as an Antisurfactant in the Growth of GaN;Physical Review Letters;2013-01-18
3. Growth and Characteristics of Self-Assembly Defect-Free GaN Surface Islands by Molecular Beam Epitaxy;Journal of Nanoscience and Nanotechnology;2011-04-01
4. Growth of low-dislocation-density AlGaN using Mg-doped AlN underlying layer;physica status solidi (c);2010-06-10
5. TEM analysis of an interface layer formed by the anti-surfactant treatment on a GaN template;Journal of Crystal Growth;2007-01
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