Phonons and free‐carrier properties of binary, ternary, and quaternary group‐III nitride layers measured by Infrared Spectroscopic Ellipsometry-Reference-Cited by-同舟云学术

Phonons and free‐carrier properties of binary, ternary, and quaternary group‐III nitride layers measured by Infrared Spectroscopic Ellipsometry

Published:2003-08-27 Issue:6 Volume: Page:1750-1769
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Kasic A.¹²,Schubert M.¹,Off J.³⁴,Kuhn B.³⁵,Scholz F.³⁶,Einfeldt S.⁷,Böttcher T.⁷,Hommel D.⁷,As D. J.⁸,Köhler U.⁸,Dadgar A.⁹,Krost A.⁹,Saito Y.¹⁰,Nanishi Y.¹⁰,Correia M. R.¹¹,Pereira S.¹¹,Darakchieva V.²,Monemar B.²,Amano H.¹²,Akasaki I.¹²,Wagner G.¹³

Affiliation:

1. Institut für Experimentelle Physik II, Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

2. Department of Physics and Measurement Technology, Linköping University, 581 83 Linköping, Sweden

3. 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

4. Now with: OSRAM Opto Semiconductors, Wernerwerkstr. 2, 93049 Regensburg, Germany

5. Now with: Robert Bosch GmbH, Tübinger Str. 123, 72762 Reutlingen, Germany

6. Now with: Abteilung Optoelektronik, Universität Ulm, 89069 Ulm, Germany

7. Institut für Festkörperphysik, Universität Bremen, Kufsteiner Straße NW 1, 28359 Bremen, Germany

8. Fachbereich Physik, Universität Paderborn, Warburger Straße 100, 33095 Paderborn, Germany

9. Institut für Experimentelle Physik, Otto‐von Guericke Universität Magdeburg, Universitätsplatz 2, 39016 Magdeburg, Germany

10. Faculty of Science and Engineering, Ritsumeikan University, 1‐1‐1 Noji‐Higashi, Kusatsu, Shiga 525‐8577, Japan

11. Departamento de Física, Universidade de Aveiro, 3810‐193 Aveiro, Portugal

12. High‐Tech Research Center and Department of Materials Science and Engineering, Meijo University, 1‐501 Shiogamaguchi, Tempaku‐ku, Nagoya 468‐8502, Japan

13. Institut für Nichtklassische Chemie, Universität Leipzig, Permoserstraße 15, 04318 Leipzig, Germany

Publisher

Wiley

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200303135

Reference50 articles.

1. Physical properties of InN with the band gap energy of 1.1eV

2. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

3. A.Röseler Infrared Spectroscopic Ellipsometry (Akademie‐Verlag Berlin 1990).

4. Phonon processes in mixed crystals of CdSx CdSe1-x

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