Tunable cavity-enhanced terahertz frequency-domain optical Hall effect-Reference-Cited by-同舟云学术

Tunable cavity-enhanced terahertz frequency-domain optical Hall effect

Published:2020-08-01 Issue:8 Volume:91 Page:083903
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Knight Sean¹^ORCID,Schöche Stefan²,Kühne Philipp³^ORCID,Hofmann Tino⁴^ORCID,Darakchieva Vanya³^ORCID,Schubert Mathias¹³⁵^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511, USA

2. J. A. Woollam Co., Inc., Lincoln, Nebraska 68508-2243, USA

3. Terahertz Materials Analysis Center, THeMAC and Center for III-Nitride Technology, C3NiT–Janzén, Department of Physics, Chemistry and Biology, Linköping University, SE 58183 Linköping, Sweden

4. Department of Physics and Optical Science, University of North Carolina at Charlotte, Charlotte, North Carolina 28223, USA

5. Leibniz Institute for Polymer Research, 01069 Dresden, Germany

Funder

Swedish Agency for Innovation Systems Under the Competence Center Program

Swedish Research Council

Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University

J. A. Woollam Foundation

National Science Foundation

Air Force Office of Scientific Research

Knut Och Alice Wallenbergs Stiftelse

Swedish Foundation for Strategic Research

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0010267

Reference36 articles.

1. Generalized far-infrared magneto-optic ellipsometry for semiconductor layer structures: determination of free-carrier effective-mass, mobility, and concentration parameters in n-type GaAs

2. Invited Article: An integrated mid-infrared, far-infrared, and terahertz optical Hall effect instrument

3. Temperature dependent effective mass in AlGaN/GaN high electron mobility transistor structures

4. Terahertz ellipsometry and terahertz optical-Hall effect

5. Hole-channel conductivity in epitaxial graphene determined by terahertz optical-Hall effect and midinfrared ellipsometry

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