Author:
Senawiratne J.,Zhao W.,Detchprohm T.,Chatterjee A.,Li Y.,Zhu M.,Xia Y.,Plawsky J. L.,Wetzel C.
Reference8 articles.
1. GaInN∕GaN growth optimization for high-power green light-emitting diodes
2. Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth
3. Temperature dependence of Raman scattering in single crystal GaN films
4. et al., in: Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe, edited by M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur (John Wiley & Sons, Inc., New York, 2001), pp. 1-30.
5. , , , , , , , and , unpublished (2007).
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