Electrical properties of gold at dislocations in silicon
Author:
Affiliation:
1. IV. Physikalisches Institut der Universität Göttingen, Friedrich‐Hund‐Platz 1, 37077 Göttingen, Germany
2. Permanent address: Institute of Solid State Physics, RAS, Chernogolovka, 142432 Moscow reg., Russia
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200460516
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Current–voltage behaviour of Schottky diodes fabricated on p-type silicon for radiation hard detectors;Physica B: Condensed Matter;2009-08
2. Electronic states at dislocations and metal silicide precipitates in crystalline silicon and their role in solar cell materials;Applied Physics A;2008-12-24
3. Electrical properties of gold in dislocated silicon;physica status solidi (a);2007-07
4. Regular Dislocation Networks in Silicon as a Tool for Nanostructure Devices used in Optics, Biology, and Electronics;Small;2007-06-04
5. Gettering in silicon photovoltaics: current state and future perspectives;physica status solidi (a);2006-03
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