Specific features of the low-temperature microwave magnetoresistance in nondegenerate p-Ge
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference4 articles.
1. Low-temperature magnetoresistance due to weak localization in lightly doped semiconductors
2. Interference quantum corrections in the low temperature microwave magnetoresistance of the nondegenerate Ge
3. K. Seeger, Semiconductor Physics (Springer-Verlag, Wien/ NY, 1973).
4. G. L. Bir and G. E. Pikus, Symmetry and Strain-Induced Effects in Semiconductors (Halsted Press, Jerusalem/ London, 1974).
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2. Angular and Temperature-related Specific Features of the Interaction between Light and Heavy Holes in Weakly Doped p-Ge:Ga at Low Temperatures;Journal of Physics: Conference Series;2012-07-30
3. Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holes;Semiconductors;2011-10
4. Angular and temperature-related specific features of averaging of hole effective masses in p-Ge at low temperatures;Annalen der Physik;2009-12-23
5. Angular and temperature‐related specific features of averaging of hole effective masses in p‐Ge at low temperatures;Annalen der Physik;2009-12-23
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